The IXFH20N100 1000V 20A N-Channel MOSFET byIXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode Applications.
Features
Applications:
| Model | IXFH20N100 |
| Brand | IXYS |
| Drain-Source Voltage (VDS) | 1000V |
| Gate-Source Voltage (VGS) | 30V |
| Drain Power Dissipation | 660W |
| Operating Temperature | -55C~150C |
| Package | TO-247 |
| Quantity | 100 |
Reviews (0)
There are no reviews yet.