IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor

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IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor

$4.00 $5.00

It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and…

Category: Others
SKU: EAK75498191875

It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB – TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode power supplies, DC-DC converters, X-ray, and laser generators. resonant converters and lamp ballasts are only a few of the numerous Applications covered by the extensive portfolio.

Features

  • High Voltage BIMOSFET
  • MOSFET compatible control 10 V turn-on gate voltage
  • Fast switching for high-frequency operation
  • Reverse conduction capability
  • Industry-standard package
Specification
Model IXBH5N160G
Brand IXYS
Type BIMOSFET
Collector-Emitter Sustaining Voltage at25C 1600 v (max)
Gate-Emitter Sustaining Voltage at25C 20V
Maximum total power dissipation 68 W
Continuous Collector Current 5.7 A
Operating and Storage Temperature Range -40C TO 150C

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