TOSHIBA GT50J322 Silicon N-Channel IGBT

TOSHIBA GT50J322 is a fourth-generation silicon N-Channel (Insulated Gate Bipolar Transistor) IGBT. IGBT can use in switching Applications by operating the Gate. It is a Through-hole(THD) active component that consists of three terminals Gate, Collector, and Emitter. GT50J322 IGBT is often used in current resonance inverter switching Applications.

Datasheet

Features

• FRD included between emitter and collector
• Enhancement mode type
• High speed TF= 0.25s (Typ.) (IC= 50A)
• Low saturation voltage VCE (Sat)= 2.1V (Typ.) (IC= 50A)

Specification