SI4090DY-T1-GE3

SI4090DY-T1-GE3

VSH:SI4090DY-T1-GE3

TheSI4090DY-T1-GE3is a100V N-channel TrenchFET Power MOSFETmanufactured byVishay Semiconductors. Here are some key specifications for this component:

• Technology: Si
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds – Drain-Source Breakdown Voltage: 100 V
• Id – Continuous Drain Current: 19.7 A
• Rds On – Drain-Source Resistance: 8 m
• Vgs – Gate-Source Voltage: -20 V to +20 V
• Vgs th – Gate-Source Threshold Voltage: 2 V
• Qg – Gate Charge: 69 nC
• Minimum Operating Temperature: -55C
• Maximum Operating Temperature: +150C
• Pd – Power Dissipation: 7.8 W
• Channel Mode: Enhancement
• Tradename: TrenchFET
• Series: SI4
• Packaging: Reel, Cut Tape, MouseReel
• Brand: Vishay Semiconductors
• Configuration: Single
• Fall Time: 10 ns
• Forward Transconductance – Min: 54 S
• Rise Time: 11 ns
• Factory Pack Quantity: 2500

The SI4090DY-T1-GE3 is commonly used in applications such as DC/DC primary side switches, synchronous rectification circuits, and telecom and server systems.