NTE337 NPN Silicon RF Transistor 18V@2A, 8W Max ~ 27 to 50MHz. RF-38S

NTE337 NPN Silicon RF Transistor 18V@2A, 8W Max ~ 27 to 50MHz. RF-38S Package

The NTE337 isa silicon NPN RF power transistor designed for use in large signal amplifier driver and predriver stages. This device is intended for use in industrial communications equipment operating at frequencies up to 80MHz.

Replaces ECG337

Specified 12.5 Volt, 50MHz Characteristics:

• Collector-Emitter Voltage Vceo: 18V Maximum
• Collector Current Ic: 2 Amps
• Output Power: 8 Watts
• Minimum Gain: 10dB
• Package: RF-38S