NTE311 NPN Silicon RF Transistor 55V@400mA, 1W Max ~ 800MHz. TO-39 (ECG311)

NTE311 NPN Silicon RF Transistor 55V@400mA, 1W Max ~ 800MHz TO-39 Package (ECG311)

The NTE311 isdesigned for Frequency Multiplier, Oscillator, Driver and Pre-Driver VHF/UHF Applications up to 800MHz.

Test Specified 28 Volt, 175MHz Characteristics:

• CollectorBase Voltage, Vcbo: 55V
• Collector-Emitter Voltage Vceo: 30V
• EmitterBase Voltage, Vebo: 3.5V
• Collector Current Ic: 400mA
• Output Power, Po: 1 Watt
• Input Power, Pi: 0.1 Watt
• Total Device Dissapation, Ptot: 5W
• Minimum Gain: 10dB Minimum
• CurrentGain Bandwidth Product, Ft: 800MHz
• Case: TO-39
• Replaces ECG311