The NCE80TD65 is an advanced Insulated-Gate Bipolar Transistor (IGBT) built using Trench Field-Stop (FSII) technology. It is specifically optimized for high-power switching applications where both low conduction loss and fast switching speeds are required. It is a favorite among repair technicians and industrial engineers in Pakistan for upgrading or maintaining solar inverters, UPS systems, and variable frequency drives (VFDs).
Optimized Efficiency: The Trench Field-Stop structure balances conduction and switching losses, meaning your inverter runs cooler and lasts longer.
High Current Density: Capable of handling up to 80A continuous current at high temperatures.
Stable Performance: Features a positive temperature coefficient for saturation voltage, making it safe and easy to use in parallel configurations.
Industrial Durability: Designed for a wide temperature range (-55C to +175C), ensuring it holds up in demanding environments.
| Feature | Specification |
| Model | NCE80TD65 |
| Voltage (V_CES) | 650V |
| Current (I_C@ 100C) | 80A |
| Pulsed Current (I_Cpuls) | 320A |
| Saturation Voltage (V_CE(sat)) | Typ. 1.7V @ 80A |
| Package | TO-247 (Through-hole) |
| Technology | Trench Field-Stop (FSII) |
Repair Compatibility: A direct, high-performance upgrade for many older or generic 600V-650V IGBTs in inverter circuits.
Cooler Operation: Its low V_CE(sat)reduces heat generation, which is the #1 cause of inverter failure in hot climates.
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