IXYS GP70N33 330V 70A Medium Frequency IGBT

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IXYS GP70N33 330V 70A Medium Frequency IGBT

$8.00 $13.00

IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a…

Category: Others
SKU: EAK75498193043

IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency Applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for surface mountings. This diode comes in a 3-pin layout namely ground (G), emitter (E), and collector (C).

Features:

  • International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB
  • Medium frequency IGBT
  • High current handling capability
  • MOS Gate turn-on-drive simplicity

Applications:

  • Uninterruptible power supplies (UPS)
  • Switched-mode and resonant-mode power supplies
  • AC motor speed control
  • DC choppers

Advantages:

  • High power density
  • Suitable for surface mounting
  • Very low switching losses for high-frequency Applications
Specification
Model IXGP70N33
Brand IXYS
Collector-Emitter Voltage 330V
Gate to Emitter Voltage 30V
Max. Collector Current 70A
Power Dissipation 48W @25C, 19W @100C
Operating Junction Temperature -55C to 150C
Package TO-220

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