IRFB38N20 200V 43A N-Channel Power MOSFET Transistor

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IRFB38N20 200V 43A N-Channel Power MOSFET Transistor

$3.19 $3.99

An N-Channel MOSFET uses electrons to create a current channel.When the MOSFET is active and switched on, electrons can move…

Category: Others
SKU: EAK75498191788

An N-Channel MOSFET uses electrons to create a current channel.When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must be 2 to 3 times the size of the N-Channel chip. As a result, MOSFET transistor N-Channels are frequently preferred for high current Applications. Higher switching frequencies will allow you to design supplies with considerably wider control-loop bandwidth which can be provided by IRFB38N20, which is typically between a fifth and a tenth of the switching frequency. This is important because the wider the loop bandwidth, the fewer output filter capacitors are needed, leading to a cheaper design and smaller pc-board footprints. IRFB38N20 is an N-Channel Power MOSFET Transistor used in high-frequency DC-DC converters.

Features
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
  • Fully Characterized Avalanche Voltage and Current
Specification

Model

IRFB38N20

Brand

IR Technologies

Transistor Polarity

N-Channel

Vds – Drain-Source Breakdown Voltage

200 V

Id – Continuous Drain Current

43 A

Rds On – Drain-Source Resistance

54 mOhms

Vgs – Gate-Source Voltage

-30 V – + 30 V

Vgs th – Gate-Source Threshold Voltage

3 V – 5 V

Operating Voltage

-55C – 175C

Package

TO-220

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