Infineon 17N80C3 800V 17A N Channel MOSFET TO-247 Package

These Power MOSFETs are designed using thecompany’s consolidated strip layout-based MESH OVERLAY process.The result isvery high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the companys proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics.

Features

• New revolutionary high voltage technology
• Ultra-low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra-low effective capacitances
• Improved transconductance

Applications

• Industrial Applications with high DC bulk voltage
• Switching Applications

Specification