G4PC50W, 600V 55A N-Channel IGBT

G4PC50W is an N-Channel Insulated Gate Bipolar Transistor(IGBT). It is a Through-hole(THD) IGBT Transistor which consists of three terminals Emitter, Gate, and Collector. It has low conduction losses and minimal minority-carrier recombination that makes it an excellent option for resonant mode switching as well (up to >300 K Hz)

Datasheet

Features

• Designed expressly for switch-mode power supply and PPF (power factor correction) Applications
• Industry-benchmark switching losses improve the efficiency of all power supply topologies
• 50% reduction of the Eoff parameter
• Low IGBT conduction losses
• Latest generation IGBT design and construction offer tighter parameters distribution, exceptional reliability
• Lead-free

Specification