G4PC50FD IGBT with Ultrafast Recovery Diode

G4PC50FD is an insulated gate bipolar transistor with ultrafast recovery time. Just because of its recovery time, it’s used in fast switching Applications and There are huge Applications of power MOSFET in SMPS and UPS. Snubber, free-wheeling diode and general switching Applications.

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Features

• Low Power Loss
• High-Efficiency
• High Current Capability
• High Surge Capability
• Guarding for Overvoltage Protection
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• It has a soft recovery time
• It’s used in switching Applications

Specification