ECG6664, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (NTE6664)

ECG6664, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (NTE6664)

FEATURES:

• NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS
• Single +5V Operation (10%)
• Maximum Access Time: 150ns
• Low Power Dissipation: 302.5mW Max (Active), 22mW Max (Standby)
• Three State Data Output
• Early-Write Common I/O Capability
• 128 Cycle, 2ms Refresh
• Control on Pin1 for Automatic or Self Refresh
• RAS-Only Refresh Mode
• CAS Controlled Output
• Fast Page Mode Cycle Time
• 16 Pin DIP Package
• Replaces NTE6664