ECG65101, NMOS 1K (256 x 4) Static RAM (SRAM) 450nS ~ 22 Pin DIP (NTE65101)

ECG65101,NMOS 1K (256 x 4) Static RAM (SRAM) 450nS ~ 22 Pin DIP (NTE65101)

FEATURES:

• NMOS 1K (256 x 4) Static RAM (SRAM) 450nS
• Organized as 256 Bytes of 4-Bits
• Static Operation
• Low Standby Power
• ThreeState Output
• Single 5V Power Supply
• Data Retention to 2V
• TTL Compatible
• Maximum Access Time: 450ns
• 22 Pin DIP Package
• Replaces NTE65101