ECG313 NPN Silicon RF Transistor 30V@20mA, 150mW Max ~ 400MHz RF-15 (NTE313)

TCG313 NPN Silicon RF Transistor 30V@20mA, 150mW Max ~ 400MHz RF-15 Package (NTE313, ECG313)

The TCG313 is specifically designed for VHF mixer and VHF/RF amplifier applications up to 400MHz. This device features high power gain, low noise, and excellent forward AGC characteristics.

Electrical Characteristics:

• CollectorBase Voltage, Vcbo: 30V
• Collector-Emitter Voltage Vceo: 30V
• EmitterBase Voltage, Vebo: 4V
• Collector Current Ic: 20mA
• Total Device Dissapation, Ptot: 150mW
• Minimum Gain: 20dB Minimum
• CurrentGain Bandwidth Product, Ft: 400MHz
• Case: RF-15
• Replaces NTE313, ECG313