ECG213, 30A@75V PNP Germanium High Power/High Gain Transistor ~ TO-36 (NTE213)

ECG213, 30A @ 75V PNP Germanium Transistor for High Power, High Gain Amplifier Applications in High Reliability Industrial Equipment ~ TO-36 (NTE213)

SPECIFICATIONS:

• Vcbo: 75V
• Vceo: 65V
• Vebo: 40V
• Ic: 30A
• Power Dissapation, Pd: 170W
• Gain, hFE: 80 Typical
• Frequency, fT: 270kHZ
• Package/Case: TO-36
• Replaces: NTE213