The BYD BGM160T75SD is an advanced IGBT designed to handle high-power loads with minimal energy loss. Utilizing Trench Field Stop (TrenchFS) technology, this transistor offers superior switching performance and thermal robustness. With a rating of 750V and 160A, it is a versatile choice for engineers repairing or building high-current inverter stages, such as those found in modern electric vehicle propulsion systems or commercial-grade power converters.
Advanced Trench Technology: Engineered for low $V_{CE(sat)}$ (saturation voltage) and low switching losses, maximizing overall system efficiency.
Integrated Fast Diode: Includes a soft, fast-recovery anti-parallel diode, ideal for high-speed switching circuits.
Robust 750V Rating: Provides excellent voltage headroom for demanding 400V-600V power bus applications.
Thermal Efficiency: Housed in a TO-247 Plus package for excellent heat dissipation and ease of mounting to high-capacity heatsinks.
Industrial Reliability: Built by BYD Semiconductor to meet the rigorous demands of automotive and industrial power environments.
| Feature | Specification |
| Model | BGM160T75SD |
| Manufacturer | BYD Semiconductor |
| Voltage ($V_{CES}$) | 750V |
| Current ($I_{C}$) | 160A (T_c = 100^C) |
| Package | TO-247 Plus |
| Technology | Trench Field Stop |
Electric Vehicles (EV): Motor controller and powertrain components.
Solar Power: High-capacity grid-tie inverters and solar chargers.
Industrial Motor Drives: High-current VFDs and servo motor controllers.
UPS Systems: Industrial-grade uninterruptible power supplies.
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