50N06L N-Channel enhancement mode power field effect transistors were created to use the exclusive planar stripe DMOS process developed by Fairchild. This cutting-edge technology has been specifically designed to reduce on-state resistance, deliver more excellent switching performance, and withstand high-energy pulses in the avalanche and commutation modes. These components are ideal for low-voltage uses, including automotive, DC/DC converters, and high-efficiency switching for power management in mobile and battery-powered goods.
Features
Low gate charge ( typical 31 n C)
50A, 60V, RDS(on) = 0.022 @VGS = 10 V
| Model | 50N06L |
| Type | MOSFET |
| Package | TO-220 |
| VDSS | 60V |
| VGSS | 25V |
| Drain current | 50A |
| Power dissipation | 150W |
| Channel temperature | 175-degree centigrade |
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