30N60A4D N-Channel IGBT

30N60A4D is a MOS gated high voltage switching device that combines the finest qualities of MOSFETs and bipolar transistors. This component combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25C and 150C, the significantly smaller on-state voltage drop only varies somewhat. The IGBT used is of development type TA49343. The TA49373 development type diode is the one employed in anti-parallel.
This IGBT is perfect for many high-frequency, high-voltage switching Applications where minimal conduction losses are crucial. For high frequency switch mode power supplies, this device has been designed.

Features

• Its frequency range is <100KHz
• It operates on 390V
• Its forward operating current is 30A at 100KHz frequency
• Its operating voltage is 390V and the current is 18A at 200KHz frequency
• Its typical fall time is 60nS
• It has low conduction loss

Specification