2SK10120 is an N-Channel silicon power MOSFET, It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. In N-Channel there is the majority of electrons. These electrons moving in the channel is accountable for the flow of current in the transistor.
Datasheet
Applications
Features
| Model | 2SK1020 |
| Brand | Fuji Electric |
| Type | N-Channel MOSFET |
| Drain-source voltage (Vdss) | 500V |
| Continuous drain current (Id) | 30A |
| Pulsed drain current (Id pulse) | 92A |
| Continuous reverse drain current (Idr) | 30A |
| Gate-source peak voltage (Vgss) | 30V |
| Max. power dissipation (Pd) | 300W |
| Operating junction temperature | 150 (degree C) |
| Storage temperature range | -55~150 (degree C) |
More styles you’ll love.
Reviews (0)
There are no reviews yet.