2N7000 Small Signal N-MOSFET 60V 200mA TO-92

The 2N7000 isa N-channel enhancement mode Field Effect Transistoris produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.

Features:

• Small signal N-Channel MOSFET.
• Drain-Source Voltage (VDS) is 60V.
• Continuous Drain Current (ID) is 200mA.
• Pulsed Drain Current (ID-peak) is 500mA.
• Gate threshold voltage (VGS-th) is 3V.
• Gate-Source Voltage is (VGS) is 20V.

Specification