2N60G N-Channel Power MOSFET 600V 2A SOT-223 SMD Transistor

The 2N60G is a high-voltage N-Channel Power MOSFET designed for efficient switching applications in power supplies, LED drivers, battery chargers, and industrial control circuits. With a maximum drain-source voltage of 600V and a continuous drain current of 2A, this MOSFET delivers low switching losses, fast switching performance, and excellent reliability. Housed in a compact SOT-223 surface-mount package, the 2N60G is ideal for space-saving PCB designs and automated SMT assembly.

Features

• N-Channel enhancement mode Power MOSFET.
• 600V drain-source voltage (VDSS).
• 2A continuous drain current.
• Low gate charge for fast switching.
• Low ON resistance for improved efficiency.
• High avalanche energy capability.
• Compact SOT-223 surface-mount package.
• Suitable for high-frequency switching.
• Excellent thermal performance.
• RoHS compliant.

Applications

• Switch-mode power supplies (SMPS).
• LED driver circuits.
• AC-DC power converters.
• Battery chargers.
• Power management systems.
• Industrial automation equipment.
• DC-DC converter circuits.
• Home appliances.
• Electronic ballasts.
• General-purpose power switching.

Specification