Onsemi Digital FET, N-Channel FDV301N, FDV301N-F1, Part #FDV301N | MOSFET | DEX

Onsemi Digital FET, N-Channel FDV301N, FDV301N-F1, Part #FDV301N | MOSFET | DEX features: 25 V, 0.22 A Continuous, 0.5 A Peak RDS(on) = 5 @ VGS = 2.7 V RDS(on) = 4 @ VGS = 4.5 V Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V GateSource Zener for ESD Ruggedness. > 6 kV Human Body Model Replace Multiple NPN Digital Transistors with One DMOS FET This Device is PbFree and Halide Free

This NChannel logic level enhancement mode field effect transistor is produced using onsemis proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one Nchannel FET can replace several different digital transistors, with different bias resistor values.

OSM:FDV301N

FDV301N