Visual Part #SQJ479EP-T1_GE3 | DEX

Visual Part #SQJ479EP-T1_GE3

TheSQJ479EP-T1_GE3is aP-channel MOSFETmanufactured byVishay Semiconductors. Lets explore its key specifications:

• Technology: Si
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK-SO-8-4
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds – Drain-Source Breakdown Voltage: 80 V
• Id – Continuous Drain Current: 32 A
• Rds On – Drain-Source Resistance: 33 m
• Vgs – Gate-Source Voltage: -20 V to +20 V
• Vgs th – Gate-Source Threshold Voltage: 2.5 V
• Qg – Gate Charge: 90 nC
• Minimum Operating Temperature: -55C
• Maximum Operating Temperature: +175C
• Pd – Power Dissipation: 68 W
• Channel Mode: Enhancement
• Qualification: AEC-Q101
• Tradename: TrenchFET
• Series: SQ
• Packaging: Reel, Cut Tape, MouseReel